shantou huashan electronic devices co.,ltd . applications low frequency power amplifier. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv ceo collector-emitter breakdown voltage 50 v i c =50ma, i b =0 bv cbo collector-base breakdown voltage 50 v i c =5ma, i e =0 bv ebo emitter-base breakdown voltage 4 v i e =5ma i c =0 i cbo collector cut-off current 100 a v cb =25v, i e =0 i ebo emitter cut-off current 100 a v eb =4v, i c =0 h fe 1 dc current gain 35 320 v ce =4v, i c =1a h fe 2 dc current gain 35 v ce =4v, i c =0.1a v ce(sat) collector- emitter saturation voltage 1.0 v i c =2a, i b =0.2a v be(on) base-emitter on voltage 1.5 v v ce =4v, i c =1a f t current gain-bandwidth product 5.0 mhz v ce =4v, i c =0.5a, f=1 mhz h fe classification a b c d 3570 60120 100200 160320 n pn s i l i c o n t r a n s i s t o r t stg storage temperature - 65~150 t j junction temperature 150 p c collector dissipation t c =25 25w v cbo collector-base voltage 50v v ceo collector-emitter voltage 50v v ebo emitter-base voltage 4v i c collector current 3.0a i cm collector current peak 8a ib base current 0.5a HC1061 1 D base b 2 D collector c 3 D emitter, e to-220
shantou huashan electronic devices co.,ltd . n pn s i l i c o n t r a n s i s t o r HC1061
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